Hewlett-Packard and SanDisk today announced an agreement to jointly develop "Storage Class Memory" (SCM) that could replace DRAM and would be 1,000 times faster than NAND flash.
The two companies will market their SCM products for use in enterprise cloud infrastructures based on HP's memristor (a revolutionary form of resistor), which it has been developing for at least five years, and SanDisk's ReRAM memory technology.
The resulting non-volatile memory technology is expected to be up to 1,000 times faster while offering up to 1,000 times more endurance than flash storage, the companies said.
It is also expected to offer significant cost, power, density and persistence improvements over DRAM technologies, according to Siva Sivaram, executive vice president of memory technology at SanDisk.
The SCM portfolio will eventually ship as enterprise SAS, SATA and PCIe-attached products that can be used to replace DRAM, and supplement NAND flash as a higher tier memory.
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